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DGP8760
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DGP8761
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| Wafer Diameter |
Max ø 300 mm (ø 8" - ø 12") |
| Basic specifications |
| Grinding Method |
Z1 and Z2 axis |
In-feed grinding with wafer rotation |
| Z3 axis |
Anomalous in-feed polishing with wafer rotation |
| Spindle |
Type |
Air bearing with high frequency motor |
| Number of axes |
3 |
| Output (kW) |
Z1 and Z2 axes |
4.8 |
6.3 |
| Z3 axis |
7.5 |
6.3 |
| Revolution speed (min-1)[rpm] |
Z1 and Z2 axes |
1,000 - 4,000 |
| Z3 axis |
1,000 - 3,000 |
1,000 - 4,000 |
Z-axis vertical stroke
(mm) |
Z1 and Z2 axes |
120 (with zero point) |
| Z3 axis |
50 |
| Z-axis vertical grinding feed speed
(mm/s) |
0.0001 - 0.08 |
| Z-axis vertical fast feed speed
(mm/s) |
50 |
| Min. Z-axis vertical movemnet (µm) |
0.1 |
| Min. Z-axis vertical movement resolution (µm) |
0.1 |
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Chuck table type |
Porous chuck table |
| Holding method |
Vacuum |
| Number of revolutions (min-1)[rpm] |
0 - 300 |
0 - 800 |
| Number of chuck tables |
4 |
| Chuck table cleaning |
Backflushing of water and compressed air is combined with oilstone
cleaning and brush cleaning |
Backflushing of water and compressed air is combined
with a leveling stone and the atomizing nozzle |
| Wafer cleaning |
Water washing by atomizing nozzle |
| Spark out frequency |
0 - 999 |
| Grinding Wheels |
Diamond wheel (mm) |
Z1 and Z2 axes |
ø 300 |
| Dry polishing wheel (mm) |
Z3 axis |
ø 450 |
| Wafer Handling Section/Wafer Cleaning Section |
Cassette storage quantity |
2 |
| Cassette flow |
Same flow and open flow |
| Spinner unit |
Water washing by atomizing nozzle and drying |
| Vacuum |
Discharge speed |
Pump |
26/34 (m3/h) 50/60 (Hz) |
| Vacuum Unit |
20/28 (m3/h) 50/60 (Hz) (-70 kPa) |
| Achievable pressure(kPa) |
90
(at water supply temperature 15 ºC and flow rate 1 L/min) |
| Electric motor (kW) |
1.5 |
| Water flow rate (L/min) |
2 (when water supply temperature is less than 30 ºC)
1.5 (when water supply temperature is less than 25 ºC)
1.0 (when water supply temperature is less than 20 ºC) |
| (when grinding ø300 mm wafers with included chuck tables) |
| Grinding Accuracy |
Thickness variation within one wafer
(µm) |
less than 3.0 (less than 3.0 when using only Z1 and Z2) |
less than 2.0 (less than 1.5 when using only Z1 and Z2) |
| Thickness variation between wafers
(µm) |
±3.0 (±3.0 when using only Z1 and Z2) |
±2.0 (±1.5 when using only Z1 and Z2) |
| Finish surface roughness (µm) |
Ra less than 0.005
[when using only Z1 and Z2 Ry approx 0.13 (#2000 fine grinding) Ry approx 0.15 (#1400 fine grinding)] |
Machine dimensions
(W x D x H) (mm) |
1,690 x 3,450 x 1,800 |
| Machine weight (kg) |
Approx. 5,100 |
Approx. 6,300 |
